An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively-biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using separate CBD front-end ADC, new architecture proposed in which directly embedded into 1st stage 1-bit 2nd-order switched-capacitor Σ-ADC, thereby improving both energy efficiency accuracy. The circuit was fabricated standard 55-nm process occupies active area 0.021 mm. measured inaccuracy ±0.6∘C (3σ) from -55 to 125 ∘C after 1-point calibration. Furthermore, it consumes 2.2 W achieves resolution 15 mK conversion time 6.4 ms, corresponds competitive FoM 3.2 pJ∙K.